APT94N65B2C6 Microchip Technology
Артикул
APT94N65B2C6
Бренд
Microchip Technology
Описание
MOSFET N-CH 650V 95A T-MAX, N-Channel 650 V 95A (Tc) 833W (Tc) Through Hole T-MAX™ [B2]
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/APT94N65B2C6.jpg
Mounting Type
Through Hole
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
35mOhm @ 35.2A, 10V
Vgs(th) (Max) @ Id
3.5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs
320 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8140 pF @ 25 V
FET Feature
Super Junction
Technology
MOSFET (Metal Oxide)
Standard Package
1
HTSUS
8541.29.0095
Series
-
Package
Bulk
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3 Variant
Supplier Device Package
T-MAX™ [B2]
Base Product Number
APT94N65
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Power Dissipation (Max)
833W (Tc)
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