APT9F100B Microchip Technology
Артикул
APT9F100B
Бренд
Microchip Technology
Описание
MOSFET N-CH 1000V 9A TO247, N-Channel 1000 V 9A (Tc) 337W (Tc) Through Hole TO-247 [B]
Цена
896 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/APT9F100B.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
337W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Rds On (Max) @ Id, Vgs
1.6Ohm @ 5A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2606 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
REACH Status
REACH Unaffected
Base Product Number
APT9F100
Supplier Device Package
TO-247 [B]
Series
POWER MOS 8™
Package
Tube
Part Status
Active
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Vgs (Max)
±30V
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