MSC040SMA120B4 Microchip Technology
Артикул
MSC040SMA120B4
Бренд
Microchip Technology
Описание
SICFET N-CH 1200V 66A TO247-4, N-Channel 1200 V 66A (Tc) 323W (Tc) Through Hole TO-247-4
Цена
3 918 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/MSC040SMA120B4.jpg
Technology
SiCFET (Silicon Carbide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
2.6V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
137 nC @ 20 V
Vgs (Max)
+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1990 pF @ 1000 V
FET Feature
-
Supplier Device Package
TO-247-4
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-4
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
150-MSC040SMA120B4
Standard Package
1
Base Product Number
MSC040
Power Dissipation (Max)
323W (Tc)
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