NAND01GW3B2CN6E Micron Technology
Артикул
NAND01GW3B2CN6E
Бренд
Micron Technology
Описание
IC FLASH 1GBIT PARALLEL 48TSOP, FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 25 ns 48-TSOP
Теги
Integrated Circuits (ICs), Интегральные микросхемы (ИМС), Memory, Память
Image
files/NAND01GW3B2CN6E.jpg
REACH Status
REACH Unaffected
Voltage - Supply
2.7V ~ 3.6V
Package / Case
48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package
48-TSOP
Technology
FLASH - NAND
Memory Type
Non-Volatile
Memory Format
FLASH
Memory Size
1Gb (128M x 8)
Memory Interface
Parallel
Write Cycle Time - Word, Page
25ns
Other Names
-NAND01GW3B2CN6E
Standard Package
576
Series
-
Package
Tray
Part Status
Obsolete
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 85°C (TA)
Base Product Number
NAND01
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
3A991B1A
HTSUS
8542.32.0051
Access Time
25 ns
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