2N3960 Microsemi
Артикул
2N3960
Бренд
Microsemi
Описание
TRANS NPN 12V TO-18, Bipolar (BJT) Transistor NPN 12 V - 400 mW Through Hole TO-18 (TO-206AA)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/2N3960.jpg
REACH Status
REACH Unaffected
Package / Case
TO-206AA, TO-18-3 Metal Can
Supplier Device Package
TO-18 (TO-206AA)
Power - Max
400 mW
Voltage - Collector Emitter Breakdown (Max)
12 V
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
300mV @ 3mA, 30mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA, 1V
Standard Package
100
Other Names
150-2N3960,1086-20937-MIL,1086-20937-ND,1086-20937
HTSUS
8541.21.0095
Series
-
Package
Bulk
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Base Product Number
2N3960
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Frequency - Transition
-
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