2N6798 Microsemi
Артикул
2N6798
Бренд
Microsemi
Описание
MOSFET N-CH 200V 5.5A TO39, N-Channel 200 V 5.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/2N6798.jpg
Other Names
2N6798-ND,150-2N6798
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
800mW (Ta), 25W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Rds On (Max) @ Id, Vgs
400mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.29 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
10V
REACH Status
REACH Unaffected
Supplier Device Package
TO-39
Series
-
Package
Bulk
Part Status
Obsolete
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-205AF Metal Can
Vgs (Max)
±20V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут