APT17N80BC3G Microsemi
Артикул
APT17N80BC3G
Бренд
Microsemi
Описание
MOSFET N-CH 800V 17A TO247-3, N-Channel 800 V 17A (Tc) 208W (Tc) Through Hole TO-247-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/APT17N80BC3G.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
208W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Rds On (Max) @ Id, Vgs
290mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2250 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
150-APT17N80BC3G,APT17N80BC3G-ND
REACH Status
REACH Unaffected
Series
CoolMOS™
Package
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Vgs (Max)
±20V
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