APT25GR120BSCD10 Microsemi
Артикул
APT25GR120BSCD10
Бренд
Microsemi
Описание
IGBT 1200V 75A 521W TO247, IGBT NPT 1200 V 75 A 521 W Through Hole TO-247
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/APT25GR120BSCD10.jpg
Power - Max
521 W
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
75 A
IGBT Type
NPT
Vce(on) (Max) @ Vge, Ic
3.2V @ 15V, 25A
Current - Collector Pulsed (Icm)
100 A
Switching Energy
434µJ (on), 466µJ (off)
Input Type
Standard
Gate Charge
203 nC
Td (on/off) @ 25°C
16ns/122ns
Other Names
APT25GR120BSCD10-ND,150-APT25GR120BSCD10
REACH Status
REACH Unaffected
Supplier Device Package
TO-247
Series
-
Package
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Test Condition
600V, 25A, 4.3Ohm, 15V
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