APT6M100K Microsemi
Артикул
APT6M100K
Бренд
Microsemi
Описание
MOSFET N-CH 1000V 6A TO220, N-Channel 1000 V 6A (Tc) 225W (Tc) Through Hole TO-220 [K]
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/APT6M100K.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
225W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
2.5Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1410 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
APT6M100KMI,APT6M100KMI-ND,APT6M100K-ND,150-APT6M100K
REACH Status
REACH Unaffected
Series
-
Package
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
TO-220 [K]
Vgs (Max)
±30V
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