JANTX2N6766 Microsemi
Артикул
JANTX2N6766
Бренд
Microsemi
Описание
MOSFET N-CH 200V 30A TO3, N-Channel 200 V 30A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
Military, MIL-PRF-19500/543
Supplier Device Package
TO-3
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
115 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Package / Case
TO-204AE
REACH Status
REACH Unaffected
Package
Bulk
Part Status
Obsolete
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
JANTX2N6766-MIL,150-JANTX2N6766,JANTX2N6766-ND
Standard Package
1
Power Dissipation (Max)
4W (Ta), 150W (Tc)
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