GAN063-650WSAQ Nexperia
Артикул
GAN063-650WSAQ
Бренд
Nexperia
Описание
GANFET N-CH 650V 34.5A TO247-3, N-Channel 650 V 34.5A (Ta) 143W (Ta) Through Hole TO-247-3
Цена
2 590 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/GAN063-650WSAQ.jpg
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
34.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
143W (Ta)
REACH Status
REACH Unaffected
FET Type
N-Channel
Supplier Device Package
TO-247-3
Other Names
1727-8711-6INACTIVE,1727-8711-1,1727-8711-2,GAN063-650WSA,1727-8711-6,1727-8711-6-ND,1727-8711-1INACTIVE,1727-8711-2-ND,1727-GAN063-650WSAQ,1727-8711-1-ND,934660022127
Series
Automotive, AEC-Q101
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Base Product Number
GAN063
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
California Prop 65
Warning Information
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