NTE199 NTE Electronics
Артикул
NTE199
Бренд
NTE Electronics
Описание
NPN SI LOW NOISE HIGH GAIN TO-92, Bipolar (BJT) Transistor NPN 50 V 100 mA - 360 mW Through Hole TO-92
Цена
196 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/NTE199.jpg
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
Power - Max
360 mW
Voltage - Collector Emitter Breakdown (Max)
50 V
Current - Collector (Ic) (Max)
100 mA
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
125mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
30nA
DC Current Gain (hFE) (Min) @ Ic, Vce
400 @ 2mA, 5V
RoHS Status
ROHS3 Compliant
Mounting Type
Through Hole
Series
-
Package
Box
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Other Names
3845-NTE199
Standard Package
1
Operating Temperature
-55°C ~ 125°C (TJ)
Frequency - Transition
-
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