NTE103 NTE Electronics
Артикул
NTE103
Бренд
NTE Electronics
Описание
T-NPN GE-AF PREAMP DR PO, Bipolar (BJT) Transistor NPN 24 V 150 mA - 150 mW Through Hole TO-204AA (TO-3)
Цена
1 564 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/NTE103.jpg
REACH Status
REACH info available upon request
Supplier Device Package
TO-204AA (TO-3)
Power - Max
150 mW
Current - Collector (Ic) (Max)
150 mA
Voltage - Collector Emitter Breakdown (Max)
24 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 1mA, 24mA
Current - Collector Cutoff (Max)
5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 12mA, 150mV
Frequency - Transition
-
Standard Package
1
Other Names
2368-NTE103
HTSUS
8541.21.0095
Series
-
Package
Bag
Part Status
Active
Operating Temperature
-65°C ~ 100°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Transistor Type
NPN
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