2N5551,412 NXP Semiconductors
Артикул
2N5551,412
Бренд
NXP Semiconductors
Описание
TRANS NPN 160V 0.3A TO-92, Bipolar (BJT) Transistor NPN 160 V 300 mA 300MHz 630 mW Through Hole TO-92-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/2N5551412.jpg
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
REACH Status
REACH Unaffected
Voltage - Collector Emitter Breakdown (Max)
160 V
Current - Collector (Ic) (Max)
300 mA
Power - Max
630 mW
Current - Collector Cutoff (Max)
50nA (ICBO)
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
RoHS Status
ROHS3 Compliant
Base Product Number
2N55
Series
-
Package
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2N5551P,2N5551P-ND,933215530412
Standard Package
1,000
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Frequency - Transition
300MHz
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