2N7000,126 NXP Semiconductors
Артикул
2N7000,126
Бренд
NXP Semiconductors
Описание
MOSFET N-CH 60V 300MA TO92-3, N-Channel 60 V 300mA (Tc) 830mW (Ta) Through Hole TO-92-3
Цена
81 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/2N7000126.jpg
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Base Product Number
2N70
Series
TrenchMOS™
Package
Tape & Box (TB)
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
300mA (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
2N7000 AMO,2N7000 AMO-ND,934003460126
Standard Package
2,000
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
830mW (Ta)
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