IRF640,127 NXP Semiconductors
Артикул
IRF640,127
Бренд
NXP Semiconductors
Описание
MOSFET N-CH 200V 16A TO220AB, N-Channel 200 V 16A (Tc) 136W (Tc) Through Hole TO-220AB
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF640127.jpg
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1850 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
136W (Tc)
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Series
TrenchMOS™
Package
Tube
Part Status
Obsolete
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IRF64
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
REACH Status
REACH Unaffected
Other Names
568-1161-5,934055545127
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