IRFR220,118 NXP Semiconductors
Артикул
IRFR220,118
Бренд
NXP Semiconductors
Описание
MOSFET N-CH 200V 4.8A DPAK, N-Channel 200 V 4.8A (Tc) 42W (Tc) Surface Mount DPAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFR220118.jpg
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Series
TrenchMOS™
Package
Tape & Reel (TR)
Part Status
Obsolete
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IRFR2
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
REACH Status
REACH Unaffected
Other Names
934056819118,IRFR220 /T3,IRFR220 /T3-ND
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