PN2907A,126 NXP Semiconductors
Артикул
PN2907A,126
Бренд
NXP Semiconductors
Описание
TRANS PNP 60V 0.6A TO92, Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 500 mW Through Hole TO-92-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/PN2907A126.jpg
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Other Names
933811930126,PN2907A AMO,PN2907A AMO-ND
Transistor Type
PNP
Power - Max
500 mW
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V
REACH Status
REACH Unaffected
Standard Package
2,000
Series
-
Package
Tape & Box (TB)
Part Status
Obsolete
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Base Product Number
PN29
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Frequency - Transition
200MHz
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