PSMN165-200K518 NXP Semiconductors
Артикул
PSMN165-200K518
Бренд
NXP Semiconductors
Описание
SMALL SIGNAL N-CHANNEL MOSFET, N-Channel 200 V 2.9A (Tc) 3.5W (Tc) Surface Mount 8-SO
Цена
78 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/PSMN165-200K518.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
165mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1330 pF @ 25 V
FET Feature
-
Supplier Device Package
8-SO
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
Series
TrenchMOS™
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
RoHS Status
Not applicable
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-PSMN165-200K518,NEXNXPPSMN165-200K518
Standard Package
1
Power Dissipation (Max)
3.5W (Tc)
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