SI4410DY,518 NXP Semiconductors
Артикул
SI4410DY,518
Бренд
NXP Semiconductors
Описание
MOSFET N-CH 30V 8SO, N-Channel 30 V 10A (Tj) 2.5W (Ta) Surface Mount 8-SO
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI4410DY518.jpg
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
10A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 5 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
REACH Status
REACH Unaffected
Series
TrenchMOS™
Package
Tape & Reel (TR)
Part Status
Obsolete
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
SI4
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
2 (1 Year)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Other Names
SI4410DY /T3-ND,954-SI4410DY518,2156-SI4410DY,518,934056382518,NEXNXPSI4410DY,518,SI4410DY /T3,SI4410DY518
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