2N5551YBU onsemi
Артикул
2N5551YBU
Бренд
onsemi
Описание
AMP GP NPN 160V 600MA TO-92, Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3
Цена
8 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/2N5551YBU.jpg
Supplier Device Package
TO-92-3
Transistor Type
NPN
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 10mA, 5V
Power - Max
625 mW
Frequency - Transition
100MHz
Moisture Sensitivity Level (MSL)
Not Applicable
RoHS Status
ROHS3 Compliant
Base Product Number
2N5551
Series
-
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
ECCN
EAR99
HTSUS
8541.21.0075
Standard Package
10,000
REACH Status
REACH Unaffected
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