2N5830 onsemi
Артикул
2N5830
Бренд
onsemi
Описание
TRANS NPN 100V 0.2A TO-92, Bipolar (BJT) Transistor NPN 100 V 200 mA - 625 mW Through Hole TO-92-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/2N5830.jpg
Supplier Device Package
TO-92-3
Transistor Type
NPN
Current - Collector (Ic) (Max)
200 mA
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
625 mW
Frequency - Transition
-
Other Names
2N5830-NDR
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Product Number
2N5830
Series
-
Package
Bulk
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
2,000
REACH Status
REACH Unaffected
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