2N7000-D26Z onsemi
Артикул
2N7000-D26Z
Бренд
onsemi
Описание
MOSFET N-CH 60V 200MA TO92-3, N-Channel 60 V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3
Цена
17 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/2N7000-D26Z.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
400mW (Ta)
Supplier Device Package
TO-92-3
Other Names
2N7000-D26ZTR,2N7000_D26ZDKR-ND,2N7000_D26ZDKRINACTIVE-ND,2N7000_D26Z-ND,2N7000-D26ZDKRINACTIVE,2N7000D26Z,2N7000_D26ZCT,ONSONS2N7000-D26Z,2N7000_D26ZCT-ND,2N7000-D26ZCT,2N7000_D26Z,2N7000_D26ZTR,2N7000_D26ZTR-ND,2156-2N7000-D26Z-OS,2N7000_D26ZDKRINACTIVE
Moisture Sensitivity Level (MSL)
Not Applicable
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
2,000
Base Product Number
2N7000
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
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