2SC5706-H onsemi
Артикул
2SC5706-H
Бренд
onsemi
Описание
TRANS NPN 50V 5A TP, Bipolar (BJT) Transistor NPN 50 V 5 A 400MHz 800 mW Through Hole TP
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/2SC5706-H.jpg
Supplier Device Package
TP
Transistor Type
NPN
Current - Collector (Ic) (Max)
5 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
240mV @ 100mA, 2A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA, 2V
Power - Max
800 mW
Frequency - Transition
400MHz
Other Names
2SC5706-H-ND,2SC5706-HOS
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Product Number
2SC5706
Series
-
Package
Bulk
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
ECCN
EAR99
HTSUS
8541.21.0075
Standard Package
500
REACH Status
REACH Unaffected
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