2SC5707-E onsemi
Артикул
2SC5707-E
Бренд
onsemi
Описание
TRANS NPN 50V 8A TP, Bipolar (BJT) Transistor NPN 50 V 8 A 330MHz 1 W Through Hole TP
Цена
69 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/2SC5707-E.jpg
Other Names
2SC5707E,2SC5707-EOS,2SC5707-E-ND
Supplier Device Package
TP
Transistor Type
NPN
Current - Collector (Ic) (Max)
8 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
240mV @ 175mA, 3.5A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA, 2V
Power - Max
1 W
Frequency - Transition
330MHz
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
Series
-
Package
Bulk
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
ECCN
EAR99
HTSUS
8541.29.0075
Standard Package
500
Base Product Number
2SC5707
REACH Status
REACH Unaffected
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