BD681S onsemi
Артикул
BD681S
Бренд
onsemi
Описание
TRANS NPN DARL 100V 4A TO-126, Bipolar (BJT) Transistor NPN - Darlington 100 V 4 A - 40 W Through Hole TO-126-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/BD681S.jpg
Supplier Device Package
TO-126-3
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A, 3V
Power - Max
40 W
Frequency - Transition
-
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
Base Product Number
BD681
Series
-
Package
Bulk
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,000
REACH Status
REACH Unaffected
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