NGTB50N65S1WG onsemi
Артикул
NGTB50N65S1WG
Бренд
onsemi
Описание
IGBT TRENCH 650V 140A TO247, IGBT Trench 650 V 140 A 300 W Through Hole TO-247-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/NGTB50N65S1WG.jpg
Current - Collector (Ic) (Max)
140 A
Voltage - Collector Emitter Breakdown (Max)
650 V
Power - Max
300 W
Input Type
Standard
Reverse Recovery Time (trr)
70 ns
IGBT Type
Trench
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 50A
Switching Energy
1.25mJ (on), 530µJ (off)
Td (on/off) @ 25°C
75ns/128ns
Test Condition
400V, 50A, 10Ohm, 15V
Current - Collector Pulsed (Icm)
140 A
Supplier Device Package
TO-247-3
Other Names
NGTB50N65S1WG-ND,NGTB50N65S1WGOS
Base Product Number
NGTB50
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Gate Charge
128 nC
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