NGTB50N60FL2WG onsemi
Артикул
NGTB50N60FL2WG
Бренд
onsemi
Описание
IGBT 600V 50A TO247, IGBT Trench Field Stop 600 V 100 A 417 W Through Hole TO-247-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/NGTB50N60FL2WG.jpg
Current - Collector (Ic) (Max)
100 A
Voltage - Collector Emitter Breakdown (Max)
600 V
Power - Max
417 W
REACH Status
REACH Unaffected
Reverse Recovery Time (trr)
94 ns
IGBT Type
Trench Field Stop
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 50A
Current - Collector Pulsed (Icm)
200 A
Switching Energy
1.5mJ (on), 460µJ (off)
Gate Charge
220 nC
Td (on/off) @ 25°C
100ns/237ns
Input Type
Standard
Supplier Device Package
TO-247-3
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Base Product Number
NGTB50
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Test Condition
400V, 50A, 10Ohm, 15V
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