FGL60N100BNTD onsemi
Артикул
FGL60N100BNTD
Бренд
onsemi
Описание
IGBT 1000V 60A 180W TO264, IGBT NPT and Trench 1000 V 60 A 180 W Through Hole TO-264-3
Цена
723 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/FGL60N100BNTD.jpg
Input Type
Standard
Current - Collector (Ic) (Max)
60 A
Voltage - Collector Emitter Breakdown (Max)
1000 V
Power - Max
180 W
REACH Status
REACH Unaffected
Reverse Recovery Time (trr)
1.2 µs
IGBT Type
NPT and Trench
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 60A
Current - Collector Pulsed (Icm)
120 A
Switching Energy
-
Gate Charge
275 nC
Td (on/off) @ 25°C
140ns/630ns
Supplier Device Package
TO-264-3
Other Names
FGL60N100BNTDFS,FGL60N100BNTD-ND
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
25
Base Product Number
FGL60N100
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Test Condition
600V, 60A, 51Ohm, 15V
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