BC639G onsemi
Артикул
BC639G
Бренд
onsemi
Описание
TRANS NPN 80V 1A TO-92, Bipolar (BJT) Transistor NPN 80 V 1 A 200MHz 625 mW Through Hole TO-92 (TO-226)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/BC639G.jpg
Supplier Device Package
TO-92 (TO-226)
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 2V
Power - Max
625 mW
Frequency - Transition
200MHz
Other Names
2156-BC639G-ON,ONSONSBC639G,BC639G-ND,BC639GOS
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Product Number
BC639
Series
-
Package
Bulk
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
ECCN
EAR99
HTSUS
8541.21.0075
Standard Package
5,000
REACH Status
REACH Unaffected
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