BD159G onsemi
Артикул
BD159G
Бренд
onsemi
Описание
TRANS NPN 350V 500MA TO225AA, Bipolar (BJT) Transistor NPN 350 V 500 mA - 20 W Through Hole TO-126
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/BD159G.jpg
Other Names
BD159GOS,ONSONSBD159G,BD159G-ND,2156-BD159G-OS
Supplier Device Package
TO-126
Transistor Type
NPN
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
350 V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA, 10V
Power - Max
20 W
Frequency - Transition
-
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
Series
-
Package
Bulk
Part Status
Obsolete
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
500
Base Product Number
BD159
REACH Status
REACH Unaffected
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