BD435S onsemi
Артикул
BD435S
Бренд
onsemi
Описание
TRANS NPN 32V 4A TO-126, Bipolar (BJT) Transistor NPN 32 V 4 A 3MHz 36 W Through Hole TO-126-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/BD435S.jpg
Other Names
2832-BD435S-488,2156-BD435S-488
Supplier Device Package
TO-126-3
Transistor Type
NPN
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
32 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA, 5V
Power - Max
36 W
Frequency - Transition
3MHz
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
Series
-
Package
Bulk
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,000
Base Product Number
BD435
REACH Status
REACH Unaffected
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