BD681S onsemi
Артикул
BD681S
Бренд
onsemi
Описание
POWER BIPOLAR TRANSISTOR, 4A, 10, Bipolar (BJT) Transistor NPN - Darlington 100 V 4 A - 40 W Through Hole TO-126-3
Цена
48 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/BD681S.jpg
Supplier Device Package
TO-126-3
Power - Max
40 W
Voltage - Collector Emitter Breakdown (Max)
100 V
Current - Collector (Ic) (Max)
4 A
Transistor Type
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A, 3V
Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Series
-
Package
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
Vendor Undefined
REACH Status
REACH Unaffected
Other Names
2156-BD681S-488
Standard Package
1
Operating Temperature
150°C (TJ)
Frequency - Transition
-
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