BDX33C onsemi
Артикул
BDX33C
Бренд
onsemi
Описание
NPN EPITAXIAL SILICON TRANSISTOR, Bipolar (BJT) Transistor NPN - Darlington 100 V 10 A - 70 W Through Hole TO-220AB
Цена
93 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/BDX33C_23.jpg
Supplier Device Package
TO-220AB
Power - Max
70 W
Voltage - Collector Emitter Breakdown (Max)
100 V
Current - Collector (Ic) (Max)
10 A
Transistor Type
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic
2.5V @ 6mA, 3A
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A, 3V
Package / Case
TO-220-3
Mounting Type
Through Hole
Series
-
Package
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
Vendor Undefined
REACH Status
REACH Affected
Other Names
2156-BDX33C-488
Standard Package
1
Operating Temperature
150°C (TJ)
Frequency - Transition
-
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