BS107ARL1G onsemi
Артикул
BS107ARL1G
Бренд
onsemi
Описание
MOSFET N-CH 200V 250MA TO92-3, N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
Цена
119 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BS107ARL1G.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
350mW (Ta)
Supplier Device Package
TO-92 (TO-226)
Other Names
BS107ARL1GOSDKR-ND,BS107ARL1G-ND,BS107ARL1GOSCT,BS107ARL1GOSTR,BS107ARL1GOSDKR,BS107ARL1GOSDKRINACTIVE
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
2,000
Base Product Number
BS107
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут