BS108G onsemi
Артикул
BS108G
Бренд
onsemi
Описание
MOSFET N-CH 200V 250MA TO92-3, N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BS108G.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2V, 2.8V
Rds On (Max) @ Id, Vgs
8Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id
1.5V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
350mW (Ta)
FET Type
N-Channel
Supplier Device Package
TO-92 (TO-226)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
1,000
Base Product Number
BS108
REACH Status
REACH Unaffected
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