BVSS123LT1G onsemi
Артикул
BVSS123LT1G
Бренд
onsemi
Описание
MOSFET N-CH 100V 170MA SOT23-3, N-Channel 100 V 170mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
Цена
81 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BVSS123LT1G.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
225mW (Ta)
Supplier Device Package
SOT-23-3 (TO-236)
Other Names
2156-BVSS123LT1G-OS,BVSS123LT1GOSDKR,BVSS123LT1GOSCT,BVSS123LT1GOSTR,BVSS123LT1G-ND,ONSONSBVSS123LT1G
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
3,000
Base Product Number
BVSS123
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
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