FCB110N65F onsemi
Артикул
FCB110N65F
Бренд
onsemi
Описание
MOSFET N-CH 650V 35A D2PAK, N-Channel 650 V 35A (Tc) 357W (Tc) Surface Mount D?PAK (TO-263)
Цена
1 006 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FCB110N65F.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id
5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs
145 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4895 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
357W (Tc)
Supplier Device Package
D?PAK (TO-263)
Other Names
FCB110N65FCT,FCB110N65FTR,FCB110N65FDKR,2156-FCB110N65F-OS,ONSONSFCB110N65F
Series
FRFET®, SuperFET® II
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Base Product Number
FCB110
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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