FCD360N65S3R0 onsemi
Артикул
FCD360N65S3R0
Бренд
onsemi
Описание
MOSFET N-CH 650V 10A DPAK, N-Channel 650 V 10A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252)
Цена
295 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FCD360N65S3R0.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
730 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Supplier Device Package
D-PAK (TO-252)
Other Names
FCD360N65S3R0OSTR,FCD360N65S3R0-ND,FCD360N65S3R0OSCT,2156-FCD360N65S3R0-OS,ONSONSFCD360N65S3R0,FCD360N65S3R0OSDKR
Series
SuperFET® III
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
FCD360
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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