FCH041N60F onsemi
Артикул
FCH041N60F
Бренд
onsemi
Описание
POWER FIELD-EFFECT TRANSISTOR, 7, N-Channel 600 V 76A (Tc) 595W (Tc) Through Hole TO-247-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FCH041N60F.jpg
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
41mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
360 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
14365 pF @ 100 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-247-3
Series
SuperFET® II
Package
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
Vendor Undefined
REACH Status
REACH Unaffected
Other Names
2156-FCH041N60F-488
Standard Package
1
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Power Dissipation (Max)
595W (Tc)
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