FCPF11N65 onsemi
Артикул
FCPF11N65
Бренд
onsemi
Описание
MOSFET N-CH 650V 11A TO220F, N-Channel 650 V 11A (Tc) 36W (Tc) Through Hole TO-220F-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FCPF11N65.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Rds On (Max) @ Id, Vgs
380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1490 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
36W (Tc)
Supplier Device Package
TO-220F-3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
Series
SuperFET™
Package
Tube
Part Status
Active
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Base Product Number
FCPF11
REACH Status
REACH Unaffected
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