FCPF190N65FL1 onsemi
Артикул
FCPF190N65FL1
Бренд
onsemi
Описание
MOSFET N-CH 650V 20.6A TO220F, N-Channel 650 V 20.6A (Tc) 39W (Tc) Through Hole TO-220F-3
Цена
198 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FCPF190N65FL1.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3055 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
39W (Tc)
Supplier Device Package
TO-220F-3
Other Names
ONSONSFCPF190N65FL1,2156-FCPF190N65FL1-OS
Series
SuperFET® II
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Base Product Number
FCPF190
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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