FCPF650N80Z onsemi
Артикул
FCPF650N80Z
Бренд
onsemi
Описание
MOSFET N-CH 800V 8A TO220F, N-Channel 800 V 8A (Tc) 30.5W (Tc) Through Hole TO-220F-3
Цена
548 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FCPF650N80Z.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 800µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1565 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
30.5W (Tc)
Supplier Device Package
TO-220F-3
Other Names
ONSONSFCPF650N80Z,2156-FCPF650N80Z-OS
Series
SuperFET® II
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Base Product Number
FCPF650
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
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