FDB2572 onsemi
Артикул
FDB2572
Бренд
onsemi
Описание
MOSFET N-CH 150V 4A/29A TO263AB, N-Channel 150 V 4A (Ta), 29A (Tc) 135W (Tc) Surface Mount D?PAK (TO-263)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDB2572.jpg
Technology
MOSFET (Metal Oxide)
Supplier Device Package
D?PAK (TO-263)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta), 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
54mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1770 pF @ 25 V
FET Feature
-
REACH Status
REACH Unaffected
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Series
PowerTrench®
Package
Tape & Reel (TR)
Part Status
Active
Base Product Number
FDB257
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
488-FDB2572TR,FDB2572-ND,FDB2572TR,FDB2572CT,FDB2572DKR
Standard Package
800
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
135W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут