FDB6670AL onsemi
Артикул
FDB6670AL
Бренд
onsemi
Описание
MOSFET N-CH 30V 80A TO263AB, N-Channel 30 V 80A (Ta) 68W (Tc) Surface Mount D?PAK (TO-263)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDB6670AL.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2440 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
68W (Tc)
FET Type
N-Channel
Supplier Device Package
D?PAK (TO-263)
Series
PowerTrench®
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-65°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Base Product Number
FDB667
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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