FDB86102LZ onsemi
Артикул
FDB86102LZ
Бренд
onsemi
Описание
MOSFET N-CH 100V 8.3A/30A TO263, N-Channel 100 V 8.3A (Ta), 30A (Tc) 3.1W (Ta) Surface Mount D?PAK (TO-263)
Цена
296 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDB86102LZ.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
8.3A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
24mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1275 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta)
Supplier Device Package
D?PAK (TO-263)
Other Names
FDB86102LZTR,FDB86102LZDKR,2156-FDB86102LZ-OS,FDB86102LZCT,ONSFSCFDB86102LZ,FDB86102LZ-ND
Series
PowerTrench®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Base Product Number
FDB86102
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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