FDC636P onsemi
Артикул
FDC636P
Бренд
onsemi
Описание
MOSFET P-CH 20V 2.8A SUPERSOT6, P-Channel 20 V 2.8A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDC636P.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
130mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.5 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
390 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.6W (Ta)
FET Type
P-Channel
Supplier Device Package
SuperSOT™-6
Other Names
FDC636P-ND,FDC636PCT,FDC636PDKR,FDC636PTR
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
3,000
Base Product Number
FDC636
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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