FDC658P onsemi
Артикул
FDC658P
Бренд
onsemi
Описание
MOSFET P-CH 30V 4A SUPERSOT6, P-Channel 30 V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Цена
124 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDC658P.jpg
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.6W (Ta)
Supplier Device Package
SuperSOT™-6
Other Names
FDC658PDKR,FDC658PTR,FDC658P-ND,FDC658PCT
Series
PowerTrench®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
3,000
Base Product Number
FDC658
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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