FDD6512A onsemi
Артикул
FDD6512A
Бренд
onsemi
Описание
MOSFET N-CH 20V 10.7A/36A DPAK, N-Channel 20 V 10.7A (Ta), 36A (Tc) 3.8W (Ta), 43W (Tc) Surface Mount TO-252AA
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDD6512A.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
10.7A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
21mOhm @ 10.7A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1082 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 43W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-252AA
Series
PowerTrench®
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
FDD651
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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