FDD6612A onsemi
Артикул
FDD6612A
Бренд
onsemi
Описание
MOSFET N-CH 30V 9.5A/30A DPAK, N-Channel 30 V 9.5A (Ta), 30A (Tc) 2.8W (Ta), 36W (Tc) Surface Mount TO-252AA
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDD6612A.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9.5A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.4 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 36W (Tc)
Supplier Device Package
TO-252AA
Other Names
FDD6612ADKR,FDD6612ACT,FDD6612ATR,FDD6612A-ND
Series
PowerTrench®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
FDD6612
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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